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GeneSiC Semiconductor G2R1000MT33J

3300V 1000m TO-263-7 G2R SiC MOSFET

Product Details

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Compliance

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REACH SVHC
Yes

Dimensions

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Height
4.81 mm

Physical

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Case/Package
TO-263-7
Mount
Surface Mount

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
5 A
Drain to Source Breakdown Voltage
3.3 kV
Drain to Source Resistance
1 Ω
Drain to Source Voltage (Vdss)
3.3 kV
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
74 W
Turn-Off Delay Time
14 ns
Turn-On Delay Time
14 ns

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