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Infineon AUIRF4905

Automotive Q101 -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB Package

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
20 mΩ
RoHS
Compliant

Dimensions

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Height
16.5 mm
Length
10.66 mm
Width
4.82 mm

Physical

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Case/Package
TO-220AB
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
-74 A
Drain to Source Breakdown Voltage
-55 V
Drain to Source Resistance
20 mΩ
Drain to Source Voltage (Vdss)
20 mΩ
Element Configuration
Single
Fall Time
96 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.4 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
20 mΩ
Package Quantity
1000
Packaging
20 mΩ
Power Dissipation
200 W
Rds On Max
20 mΩ
Rise Time
No SVHC
Threshold Voltage
-2 V
Turn-Off Delay Time
61 ns
Turn-On Delay Time
18 ns

Compliance Documents

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