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Infineon AUIRF5210STRL

Automotive Q101 -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

Product Details

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Compliance

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Lead Free
Production
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
5.084 mm

Physical

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Case/Package
TO-263-3
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
-38 A
Drain to Source Breakdown Voltage
-100 V
Drain to Source Resistance
60 mΩ
Drain to Source Voltage (Vdss)
-100 V
Fall Time
55 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.78 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
150 °C
Max Power Dissipation
3.1 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
60 mΩ
On-State Resistance
60 mΩ
Package Quantity
800
Power Dissipation
170 W
Rds On Max
60 mΩ
Rise Time
63 ns
Turn-Off Delay Time
72 ns
Turn-On Delay Time
14 ns

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