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Infineon AUIRF7749L2TR

60V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package, MG-WDSON-11, RoHS

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Compliance

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RoHS
Compliant

Dimensions

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Height
740 µm

Physical

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Mount
Surface Mount

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
345 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
1.1 mΩ
Drain to Source Voltage (Vdss)
60 V
Gate to Source Voltage (Vgs)
60 V
Input Capacitance
10.655 nF
Manufacturer Package Identifier
AUIRF7749L2TR
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
3.8 W
Min Operating Temperature
-55 °C
Number of Channels
1
On-State Resistance
1.5 mΩ
Package Quantity
4000
Packaging
Tape & Reel
Power Dissipation
3.8 W
Rds On Max
1.5 mΩ
Threshold Voltage
2 V
Turn-Off Delay Time
72 ns
Turn-On Delay Time
29 ns

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