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Infineon AUIRLL014NTR

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Package, SOT223-4, RoHS

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
140 mΩ

Dimensions

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Height
1.8 mm
Length
6.7 mm
Width
IBS

Physical

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Case/Package
SOT-223
Mount
-55 °C
Number of Pins
4

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
2:00 AM
Drain to Source Breakdown Voltage
2 A
Drain to Source Resistance
140 mΩ
Drain to Source Voltage (Vdss)
140 mΩ
Fall Time
2.9 ns
Gate to Source Voltage (Vgs)
16 V
Input Capacitance
230 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
140 mΩ
Package Quantity
140 mΩ
Packaging
Tape & Reel
Power Dissipation
2500
Rds On Max
140 mΩ
Rise Time
4.9 ns
Threshold Voltage
2 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
5.1 ns

Compliance Documents

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