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Infineon BCP5616H6327XTSA1

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
1.6 mm
Length
6.5 mm
Width
IBS

Physical

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Case/Package
SOT
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
4

Supply Chain

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Lifecycle Status
NRND

Technical

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Collector Base Voltage (VCBO)
100 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
80 V
Continuous Collector Current
1:00 AM
Current
1 A
Element Configuration
1 A
Emitter Base Voltage (VEBO)
5 V
Gain Bandwidth Product
100 MHz
hFE Min
1.8 mm
Manufacturer Package Identifier
-65 °C
Max Collector Current
PG-SOT223-4
Max Frequency
1 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Number of Elements
1
Package Quantity
1000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
2 W
Transition Frequency
100 MHz
Voltage
80 V

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