Skip to main content

Infineon BCR133E6433HTMA1

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 5 V 1 mA 13 MHz 2 mW Surface Mount SOT-23-3

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
RoHS
Compliant

Dimensions

Select to search
related specs
Height
1.1 mm

Physical

Select to search
related specs
Case/Package
TO-236-3
Contact Plating
50 V
Mount
Surface Mount
Number of Pins
3

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
300 mV
Current Rating
100 mA
Element Configuration
Single
hFE Min
30
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Cut Tape (CT)
Power Dissipation
200 mW
Transition Frequency
130 MHz
Voltage Rating (DC)
50 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us