Skip to main content

Infineon BCR503E6327HTSA1

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 5 V 5 mA 1 MHz 33 mW Surface Mount SOT-23-3

Product Details

Find similar products  

Compliance

Select to search
related specs
Halogen Free
Not Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Select to search
related specs
Height
900 µm
Length
2.9 mm
Width
1.3 mm

Physical

Select to search
related specs
Case/Package
SOT
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Select to search
related specs
Lifecycle Status
NRND

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
10 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
50 V
Current Rating
500 mA
Element Configuration
Single
hFE Min
40
Input Resistance
2.2 kΩ
Max Breakdown Voltage
50 V
Max Collector Current
500 mA
Max Operating Temperature
150 °C
Max Power Dissipation
330 mW
Min Operating Temperature
-65 °C
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
330 mW
Transition Frequency
100 MHz
Voltage Rating (DC)
50 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us