Skip to main content

Infineon BCR512E6327HTSA1

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 5 V 5 mA 1 MHz 33 mW Surface Mount SOT-23-3

Product Details

Find similar products  

Compliance

Select to search
related specs
Halogen Free
Not Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Select to search
related specs
Height
1.1 mm
Length
2.9 mm
Width
1.3 mm

Physical

Select to search
related specs
Case/Package
SOT
Mount
Surface Mount
Number of Pins
3

Supply Chain

Select to search
related specs
Lifecycle Status
NRND

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
50 V
Current Rating
500 mA
Element Configuration
Single
Gain Bandwidth Product
100 MHz
hFE Min
60
Input Resistance
4.7 kΩ
Max Breakdown Voltage
50 V
Max Collector Current
500 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
330 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
330 mW
Transition Frequency
100 MHz
Voltage Rating (DC)
50 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us