Skip to main content

Infineon BFP640H6327XTSA1

BFP640 Series 4.5 V NPN Low Noise Germanium Bipolar RF Transistor - PG-SOT343-4

Product Details

Find similar products  

Compliance

Select to search
related specs
Halogen Free
Halogen Free
Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
Compliant

Physical

Select to search
related specs
Case/Package
SOT
Mount
-65 °C
Number of Pins
4

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
13 V
Collector Emitter Breakdown Voltage
4 V
Collector Emitter Voltage (VCEO)
4 V
Emitter Base Voltage (VEBO)
1.2 V
Frequency
40 GHz
Gain
12.5 dB
Max Breakdown Voltage
4.5 V
Max Collector Current
50 mA
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Noise Figure
0.65 dB
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
200 mW
Power Gain
24 dB
Transition Frequency
40 GHz

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us