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Infineon BFP840FESDH6327XTSA1

RF Bipolar Transistor with an integrated ESD protection suitable for 5 GHz band

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
RoHS
Compliant

Physical

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Contact Plating
Tin
Mount
-55 °C
Number of Pins
4

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
2.9 V
Collector Emitter Breakdown Voltage
2.6 V
Collector Emitter Voltage (VCEO)
2.25 V
Continuous Collector Current
35 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
2.6 V
Frequency
85 GHz
Gain
35 dB
Max Breakdown Voltage
2.6 V
Max Collector Current
35 mA
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Noise Figure
0.55 dB
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
75 mW
Power Gain
27.5 dB
Transition Frequency
85 GHz

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