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Infineon BFR740L3RHE6327XTSA1

RF Bipolar Transistors NPN Silicn Germanium RF Transistor

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

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Contact Plating
Gold
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
13 V
Collector Emitter Voltage (VCEO)
4 V
Current Rating
30 mA
Emitter Base Voltage (VEBO)
1.2 V
Frequency
42 GHz
Max Collector Current
30 mA
Max Operating Temperature
150 °C
Max Power Dissipation
160 mW
Min Operating Temperature
-65 °C
Noise Figure
0.5 dB
Number of Elements
1
Package Quantity
15000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
160 mW
Power Gain
24.5 dB
Voltage Rating (DC)
4 V

Compliance Documents

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