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Infineon BFR93AWH6327XTSA1

Bipolar junction transistor, NPN, 90 mA, 12 V, SMD, SOT-323, BFR93AWH6327XTSA1

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
RoHS
Compliant

Physical

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Case/Package
SOT
Contact Plating
Tin
Mount
-65 °C
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
20 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage (VCEO)
12 V
Emitter Base Voltage (VEBO)
2 V
Frequency
6 GHz
Gain
15.5 dB
Max Breakdown Voltage
12 V
Max Collector Current
90 mA
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Noise Figure
1.5 dB
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
300 mW
Power Gain
15.5 dB
Transition Frequency
6 GHz

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