Skip to main content

Infineon BFS481H6327XTSA1

Transistor: NPN x2, bipolar, RF, 12V, 20mA, 175mW, SOT363

Product Details

Find similar products  

Compliance

Select to search
related specs
Halogen Free
Halogen Free
Lead Free
Lead Free
RoHS
Compliant

Dimensions

Select to search
related specs
Height
800 µm
Length
2 mm
Width
1.25 mm

Physical

Select to search
related specs
Case/Package
SOT
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
20 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage (VCEO)
12 V
Emitter Base Voltage (VEBO)
2 V
Frequency
8 GHz
Gain
20 dB
Max Breakdown Voltage
12 V
Max Collector Current
20 mA
Max Operating Temperature
150 °C
Max Power Dissipation
175 mW
Min Operating Temperature
-65 °C
Noise Figure
0.9 dB
Number of Elements
2
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
175 mW
Power Gain
20 dB
Transition Frequency
8 GHz

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us