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Infineon BSB028N06NN3GXUMA1

Single N-Channel 60 V 2.8 mOhm 108 nC OptiMOS Power Mosfet - MG-WDSON-2

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
680 µm

Physical

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Case/Package
TO-220-3
Number of Pins
7

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
90 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
2.2 mΩ
Drain to Source Voltage (Vdss)
60 V
Fall Time
6 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
8.8 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
78 W
Min Operating Temperature
-40 °C
Number of Channels
1
On-State Resistance
2.8 mΩ
Package Quantity
5000
Packaging
Tape & Reel
Power Dissipation
78 W
Rds On Max
2.8 mΩ
Rise Time
9 ns
Threshold Voltage
3 V
Turn-Off Delay Time
38 ns
Turn-On Delay Time
21 ns

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