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Infineon BSC009NE2LSATMA1

N-Channel 25 V 0.9 mOhm OptiMOS Power-MOSFET - PG-TDSON-8

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Contains Lead
RoHS
Compliant

Dimensions

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Height
1 mm

Physical

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Mount
Surface Mount
Number of Pins
8

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
41 A
Drain to Source Breakdown Voltage
25 V
Drain to Source Resistance
750 µΩ
Drain to Source Voltage (Vdss)
25 V
Fall Time
19 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
5.8 nF
Max Dual Supply Voltage
25 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
900 µΩ
Package Quantity
5000
Packaging
Tape & Reel
Power Dissipation
2.5 W
Rise Time
33 ns
Turn-Off Delay Time
48 ns
Turn-On Delay Time
10 ns

Compliance Documents

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