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Infineon BSC019N04NSGATMA1

Single N-Channel 40 V 1.9 mOhm 108 nC OptiMOS Power Mosfet - TDSON-8

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Contains Lead
RoHS
Compliant

Dimensions

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Height
1.1 mm

Physical

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Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
29 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
1.6 mΩ
Drain to Source Voltage (Vdss)
40 V
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
6.6 nF
Max Dual Supply Voltage
40 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
125 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
1.9 mΩ
Package Quantity
5000
Packaging
Tape & Reel
Power Dissipation
2.5 W
Rds On Max
1.9 mΩ
Rise Time
5.6 ns
Turn-Off Delay Time
33 ns
Turn-On Delay Time
22 ns

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