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Infineon BSC057N08NS3GATMA1

MOSFET Transistor, N Channel, 100 A, 80 V, 0.0047 ohm, 10 V, 2.8 V

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Contains Lead
RoHS
5.7 mΩ

Physical

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Contact Plating
Tin
Mount
-55 °C
Number of Pins
8

Supply Chain

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Lifecycle Status
Production

Technical

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related specs
Continuous Drain Current (ID)
16 A
Drain to Source Resistance
4.7 mΩ
Drain to Source Voltage (Vdss)
4.7 mΩ
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.9 nF
Max Dual Supply Voltage
80 V
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
5.7 mΩ
Package Quantity
5.7 mΩ
Packaging
Tape & Reel
Power Dissipation
5000
Rds On Max
5.7 mΩ
Rise Time
114 W

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