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Infineon BSC123N08NS3GATMA1

Transistor, MOSFET, N-channel normal level, 80V, 11A, 12.3 mOhm, TDSON8 Infineon BSC123N08NS3 G

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Contains Lead
Radiation Hardening
No
RoHS
Compliant

Physical

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Mount
Surface Mount
Number of Pins
8

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
11 A
Drain to Source Resistance
10.3 mΩ
Drain to Source Voltage (Vdss)
80 V
Fall Time
4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.43 nF
Max Dual Supply Voltage
80 V
Max Operating Temperature
150 °C
Max Power Dissipation
66 W
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
12.3 mΩ
Package Quantity
5000
Packaging
Tape & Reel
Power Dissipation
66 W
Rds On Max
12.3 mΩ
Rise Time
18 ns
Turn-Off Delay Time
19 ns
Turn-On Delay Time
12 ns

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