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Infineon BSC190N15NS3GATMA1

MOSFET Transistor, N Channel, 50 A, 150 V, 0.016 ohm, 10 V, 3 V

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Contains Lead
RoHS
Compliant

Dimensions

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Height
1.1 mm

Physical

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Mount
Surface Mount
Number of Pins
8

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
50 A
Drain to Source Breakdown Voltage
150 V
Drain to Source Resistance
16 mΩ
Drain to Source Voltage (Vdss)
150 V
Fall Time
6 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.82 nF
Max Dual Supply Voltage
150 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
125 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
19 mΩ
Package Quantity
5000
Packaging
Tape & Reel
Power Dissipation
125 W
Rds On Max
19 mΩ
Rise Time
53 ns
Threshold Voltage
3 V
Turn-Off Delay Time
25 ns
Turn-On Delay Time
15 ns

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