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Infineon BSC252N10NSFGATMA1

N-Channel 100 V 2.25 mOhm OptiMOS2 Power-Transistor - PG-TDSON-8

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Contains Lead
RoHS
25.2 mΩ

Physical

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Contact Plating
Tin
Mount
-55 °C
Number of Pins
8

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
7.2 A
Drain to Source Resistance
19.5 mΩ
Drain to Source Voltage (Vdss)
19.5 mΩ
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
860 pF
Max Dual Supply Voltage
100 V
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
25.2 mΩ
Package Quantity
25.2 mΩ
Packaging
Tape & Reel
Power Dissipation
5000
Rds On Max
25.2 mΩ
Rise Time
21 ns

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