Skip to main content

Infineon BSM100GB120DN2

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN

Product Details

Find similar products  

Compliance

Select to search
related specs
Radiation Hardening
No
RoHS
Compliant

Physical

Select to search
related specs
Case/Package
Module
Mount
-40 °C
Number of Pins
734

Technical

Select to search
related specs
Collector Emitter Breakdown Voltage
1.2 kV
Collector Emitter Saturation Voltage
2.5 V
Collector Emitter Voltage (VCEO)
1.2 kV
Element Configuration
Dual
Max Collector Current
150 A
Max Operating Temperature
150 °C
Min Operating Temperature
150 °C
Power Dissipation
800 W

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us