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Infineon BSO110N03MSGXUMA1

Mosfet Transistor, N Channel, 10 A, 30 V, 0.0092 Ohm, 10 V, 2 V

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

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Case/Package
SO
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
10 A
Drain to Source Resistance
9.2 mΩ
Drain to Source Voltage (Vdss)
30 V
Fall Time
4.4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 nF
Max Dual Supply Voltage
30 V
Max Operating Temperature
150 °C
Max Power Dissipation
1.56 W
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
11 mΩ
Package Quantity
2500
Packaging
Tape & Reel
Power Dissipation
2.5 W
Rds On Max
11 mΩ
Rise Time
4.4 ns
Turn-Off Delay Time
9.5 ns
Turn-On Delay Time
7.8 ns

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