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Infineon BSP170PH6327XTSA1

Transistor, small signal, MOSFET, P-channel, 1.9A, 60V, SIPMOS, SOT223 Infineon BSP170PH6327XTSA1

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
RoHS
300 mΩ

Dimensions

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Height
1.6 mm
Length
6.5 mm
Width
IBS

Physical

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Case/Package
SOT-223
Contact Plating
Tin
Mount
-55 °C
Number of Pins
4

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
-1.9 A
Drain to Source Breakdown Voltage
-60 V
Drain to Source Resistance
239 mΩ
Drain to Source Voltage (Vdss)
239 mΩ
Element Configuration
Single
Fall Time
60 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.8 mm
Manufacturer Package Identifier
PG-SOT223-4
Max Dual Supply Voltage
-60 V
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
1.8 W
Number of Channels
1
Number of Elements
1
On-State Resistance
300 mΩ
Package Quantity
300 mΩ
Packaging
Tape & Reel
Power Dissipation
1000
Rds On Max
300 mΩ
Rise Time
28 ns
Threshold Voltage
-3 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
14 ns

Compliance Documents

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