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Infineon BSP297H6327XTSA1

Single N-Channel 200 V 1.8 Ohm 12.9 nC SIPMOS Small Signal Mosfet - SOT-223

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.8 mm
Length
6.5 mm
Width
6.7 mm

Physical

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Case/Package
SOT-223-4
Mount
Surface Mount
Number of Pins
4

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
600 mA
Current
66 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
1 Ω
Drain to Source Voltage (Vdss)
200 V
Dual Supply Voltage
200 V
Element Configuration
Single
Fall Time
19 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
286 pF
Manufacturer Package Identifier
PG-SOT223-4
Max Dual Supply Voltage
200 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.8 W
Min Operating Temperature
-55 °C
Nominal Vgs
1.4 V
Number of Channels
1
Number of Elements
1
On-State Resistance
1.8 Ω
Package Quantity
1000
Packaging
Tape & Reel
Power Dissipation
1.8 W
Rds On Max
1.8 Ω
Rise Time
3.8 ns
Termination
SMD/SMT
Threshold Voltage
1.4 V
Turn-Off Delay Time
49 ns
Turn-On Delay Time
5.2 ns
Voltage
200 V

Compliance Documents

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