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Infineon BSP322PH6327XTSA1

Single P-Channel 100 V 800 mOhm 12.4 nC SIPMOS Small Signal Mosfet - SOT-223

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
RoHS
800 mΩ

Dimensions

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Height
1.6 mm
Length
6.5 mm
Width
IBS

Physical

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Case/Package
SOT-223
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
4

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
1:00 AM
Drain to Source Resistance
1 A
Drain to Source Voltage (Vdss)
-100 V
Element Configuration
Single
Fall Time
8.3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
280 pF
Max Dual Supply Voltage
-100 V
Max Operating Temperature
150 °C
Max Power Dissipation
1.8 W
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
800 mΩ
Package Quantity
800 mΩ
Packaging
1000
Power Dissipation
1.8 W
Rds On Max
800 mΩ
Rise Time
4.3 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
4.6 ns

Compliance Documents

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