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Infineon BUZ111S

80 A 55 V 0.008 Ohm N-channel Si Power Mosfet TO-220AB

Product Details

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Compliance

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RoHS
Non-Compliant

Dimensions

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Height
20.7 mm

Physical

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Case/Package
TO-220

Technical

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Continuous Drain Current (ID)
80 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
6.5 mΩ
Drain to Source Voltage (Vdss)
55 V
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
300 W
Turn-Off Delay Time
65 ns
Turn-On Delay Time
25 ns

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