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Infineon DF80R12W2H3FB11BPSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel

Product Details

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Compliance

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RoHS
Non-Compliant

Dimensions

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Height
12.35 mm

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Emitter Saturation Voltage
1.55 V
Collector Emitter Voltage (VCEO)
1.2 kV
Continuous Collector Current
20 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
150 °C
Package Quantity
-40 °C
Turn-Off Delay Time
250 ns
Turn-On Delay Time
25 ns

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