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Infineon FF150R17KE4HOSA1

IGBT Array & Module Transistor, Dual NPN, 250 A, 1.95 V, 1.1 kW, 1.7 kV, Module

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
31.4 mm

Physical

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Case/Package
Module
Mount
Screw
Number of Pins
7

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Emitter Breakdown Voltage
1.7 kV
Collector Emitter Saturation Voltage
1.95 V
Collector Emitter Voltage (VCEO)
1.7 kV
Continuous Collector Current
150 A
Element Configuration
Dual
Max Collector Current
250 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.1 kW
Min Operating Temperature
-40 °C
Package Quantity
10
Packaging
Bulk
Polarity
NPN
Turn-Off Delay Time
700 ns
Turn-On Delay Time
240 ns

Compliance Documents

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