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Infineon FF200R12KE3HOSA1

IGBT Array & Module Transistor, N Channel, 295 A, 1.7 V, 1.05 kW, 1.2 kV, Module

Product Details

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Compliance

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Halogen Free
Not Halogen Free
Lead Free
Lead Free
RoHS
Compliant

Dimensions

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Height
31.4 mm

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Emitter Saturation Voltage
1.7 V
Collector Emitter Voltage (VCEO)
1.2 kV
Continuous Collector Current
295 A
Element Configuration
Dual
Max Operating Temperature
125 °C
Min Operating Temperature
-40 °C
Package Quantity
10
Power Dissipation
1.05 kW
Turn-Off Delay Time
550 ns
Turn-On Delay Time
250 ns

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