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International Rectifier 2N6766

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Product Details

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Compliance

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Radiation Hardening
100 mΩ
REACH SVHC
No SVHC
RoHS
Non-Compliant

Physical

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Contact Plating
Lead, Tin
Mount
-55 °C
Number of Pins
2

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
30 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
85 mΩ
Drain to Source Voltage (Vdss)
85 mΩ
Gate to Source Voltage (Vgs)
20 V
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
2 V
Number of Elements
1
On-State Resistance
100 mΩ
Power Dissipation
150 W

Compliance Documents

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