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Home Products Discrete Semiconductors Transistors BJTs 1214-110M

Microchip 1214-110M

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Physical

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Mount
Chassis Mount, Screw
Number of Pins
55

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Emitter Breakdown Voltage
75 V
Collector Emitter Voltage (VCEO)
75 V
Gain
7.4 dB
Max Collector Current
8 A
Max Operating Temperature
200 °C
Max Power Dissipation
270 W
Min Operating Temperature
-65 °C
Packaging
Bulk
Transition Frequency
1.4 GHz

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