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Nexperia BCM857BV,115

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
600 µm
Length
1.7 mm
Width
1.3 mm

Physical

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Case/Package
SOT-666
Mount
Surface Mount
Number of Pins
6

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
400 mV
Collector Emitter Voltage (VCEO)
45 V
Element Configuration
Dual
Emitter Base Voltage (VEBO)
5 V
Frequency
175 MHz
Gain Bandwidth Product
175 MHz
hFE Min
200
Max Breakdown Voltage
45 V
Max Collector Current
100 mA
Max Frequency
175 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-65 °C
Number of Elements
2
Polarity
PNP
Power Dissipation
300 mW
Transition Frequency
175 MHz

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