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Nexperia BSH202,215

BSH202 Series 30 V 0.9 Ohm 417 mW P-Channel Enhancement MOS Transistor - SOT-23

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
417 mW
REACH SVHC
No SVHC
RoHS
900 mΩ

Dimensions

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Height
6.35 mm
Length
6.35 mm
Width
6.35 mm

Physical

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Case/Package
SOT
Contact Plating
Tin
Number of Pins
3
Weight
4.535924 g

Supply Chain

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Lifecycle Status
EOL

Technical

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Continuous Drain Current (ID)
-520 mA
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
900 mΩ
Drain to Source Voltage (Vdss)
-30 V
Dual Supply Voltage
-30 V
Element Configuration
Single
Fall Time
4.5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
80 pF
Max Dual Supply Voltage
-30 V
Max Operating Temperature
150 °C
Max Power Dissipation
417 mW
Min Operating Temperature
-55 °C
Nominal Vgs
-1.9 V
Number of Elements
1
Packaging
Digi-Reel®
Power Dissipation
Tape & Reel
Rds On Max
900 mΩ
Resistance
900 mΩ
Rise Time
900 mΩ
Termination
Compliant
Threshold Voltage
-1.9 V
Turn-Off Delay Time
IBS
Turn-On Delay Time
2 ns

Compliance Documents

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