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Nexperia PHT6NQ10T,135

N-Channel 100 V 1.8 W 21 nC SMT TrenchMOS Transistor - SOT-223

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
90 mΩ

Dimensions

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Height
1.7 mm
Length
6.7 mm
Width
IBS

Physical

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Case/Package
SOT
Number of Pins
4

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
3:00 AM
Drain to Source Breakdown Voltage
3 A
Drain to Source Resistance
90 mΩ
Drain to Source Voltage (Vdss)
90 mΩ
Element Configuration
Single
Fall Time
15 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
633 pF
Max Dual Supply Voltage
100 V
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Number of Elements
-65 °C
Packaging
Tape & Reel
Power Dissipation
1.8 W
Rds On Max
90 mΩ
Rise Time
15 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
6 ns

Compliance Documents

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