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NTE Electronics NTE199

Transistor, Bipolar, Si, NPN, Amplifier, High Gain, VCEO 50V, IC 100mA, PD 360mW

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
5.334 mm
Length
5.1816 mm
Width
4.191 mm

Physical

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Case/Package
TO-92
Mount
-55 °C
Number of Pins
3
Weight
7.257478 g

Technical

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Collector Base Voltage (VCBO)
70 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
125 mV
Collector Emitter Voltage (VCEO)
50 V
Emitter Base Voltage (VEBO)
5 V
Max Collector Current
100 mA
Max Operating Temperature
125 °C
Max Power Dissipation
125 °C
Min Operating Temperature
-55 °C
Polarity
NPN
Power Dissipation
260 mW

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