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NXP Semiconductors AFT27S010NT1

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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RoHS
Compliant

Physical

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Contact Plating
Tin
Mount
Surface Mount

Technical

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Current Rating
10 µA
Frequency
2.17 GHz
Gain
21.7 dB
Gate to Source Voltage (Vgs)
10 V
Max Operating Temperature
225 °C
Min Operating Temperature
-40 °C
Output Power
1.26 W
Packaging
Cut Tape (CT)
Test Current
90 mA
Test Voltage
28 V
Voltage Rating
65 V

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