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NXP Semiconductors BF510,215

BF510 Series 10 V 30 mA 100 MHz N-Channel Silicon Field-Effect Transistor - SOT-23-3

Product Details

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Compliance

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Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
1 mm
Length
3 mm
Width
1.4 mm

Physical

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Case/Package
TO-236-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
200.998119 mg

Technical

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Continuous Drain Current (ID)
30 mA
Current Rating
30 mA
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Single
Frequency
100 MHz
Gate to Source Voltage (Vgs)
20 V
Max Operating Temperature
150 °C
Max Power Dissipation
250 mW
Min Operating Temperature
-65 °C
Noise Figure
1.5 dB
Packaging
Digi-Reel®
Test Current
5 mA
Test Voltage
10 V
Voltage Rating
20 V

Compliance Documents

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