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NXP Semiconductors BFR93A

Bipolar - RF Transistor, NPN, 12 V, 6 GHz, 300 mW, 35 mA, 90

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1 mm
Length
3 mm
Width
1.4 mm

Physical

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Mount
Surface Mount
Number of Pins
3

Technical

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Collector Base Voltage (VCBO)
15 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage (VCEO)
12 V
Current
35 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
2 V
Frequency
6 GHz
Max Collector Current
35 mA
Max Frequency
6 GHz
Max Operating Temperature
175 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Cut Tape
Polarity
NPN
Power Dissipation
300 mW
Transition Frequency
6 GHz
Voltage
12 V

Compliance Documents

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