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NXP Semiconductors BFT25,215

Bipolar - Rf Transistor, Npn, 5 V, 2.3 Ghz, 30 Mw, 6.5 Ma, 40 Rohs Compliant: Yes

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Compliance

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Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
1 mm
Length
3 mm
Width
1.4 mm

Physical

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Case/Package
TO-236-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
IBS

Technical

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Collector Base Voltage (VCBO)
8 V
Collector Emitter Breakdown Voltage
5 V
Collector Emitter Voltage (VCEO)
5 V
Continuous Collector Current
6.5 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
2 V
Frequency
2.3 GHz
Gain Bandwidth Product
2.3 GHz
hFE Min
20
Max Breakdown Voltage
5 V
Max Collector Current
6.5 mA
Max Operating Temperature
175 °C
Max Power Dissipation
30 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Tape & Reel (TR)
Polarity
NPN
Power Dissipation
30 mW
Transition Frequency
2.3 GHz

Compliance Documents

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