Skip to main content

onsemi 2N5088G

Bulk Through Hole NPN Single Bipolar (BJT) Transistor 300 @ 100muA 5V 50nA ICBO 625mW 50MHz

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
5.33 mm
Length
19.05 mm
Width
6.35 mm

Physical

Select to search
related specs
Case/Package
TO-92
Number of Pins
3
Weight
4.535924 g

Supply Chain

Select to search
related specs
Lifecycle Status
Obsolete

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
35 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
30 V
Current Rating
50 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
4.5 V
Frequency
50 MHz
Gain Bandwidth Product
50 MHz
hFE Min
300
Max Collector Current
100 mA
Max Frequency
50 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
625 mW
Transition Frequency
50 MHz
Voltage Rating (DC)
30 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us