Skip to main content

onsemi 2N5550G

Bipolar (Bjt) Single Transistor, General Purpose, Npn, 140 V, 300 Mhz, 625 Mw, 600 Ma, 60 Rohs Compliant: Yes

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
5.33 mm
Length
5.2 mm
Width
4.19 mm

Physical

Select to search
related specs
Case/Package
TO-92-3
Contact Plating
Copper, Silver, Tin
Number of Pins
3
Weight
4.535924 g

Supply Chain

Select to search
related specs
Lifecycle Status
Obsolete

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
160 V
Collector Emitter Breakdown Voltage
140 V
Collector Emitter Saturation Voltage
250 mV
Collector Emitter Voltage (VCEO)
140 V
Current Rating
600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
300 MHz
Gain Bandwidth Product
300 MHz
hFE Min
60
Max Collector Current
600 mA
Max Frequency
300 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
625 mW
Termination
Through Hole
Transition Frequency
300 MHz
Voltage Rating (DC)
140 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us