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onsemi 2N7002T

N-Channel MOSFET, Enhancement Mode, 60V, 115mA, 2Ω

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
780 µm
Length
1.7 mm
Width
980 µm

Physical

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Case/Package
SOT-523
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
30 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
115 mA
Drain to Source Breakdown Voltage
78 V
Drain to Source Resistance
2 Ω
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
50 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Nominal Vgs
1.76 V
Number of Channels
1
Number of Elements
1
Power Dissipation
200 mW
Rds On Max
7.5 Ω
Resistance
7.5 Ω
Threshold Voltage
1 V
Turn-Off Delay Time
12.5 ns
Turn-On Delay Time
5.85 ns

Compliance Documents

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