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onsemi 2SA1416S-TD-E

Bipolar Transistor, -100V, -1A, Low VCE(sat), (PNP)NPN Single PCP hFE = 140 - 280

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Dimensions

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Height
1.5 mm
Length
4.5 mm
Width
2.5 mm

Physical

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Case/Package
SOT-89
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
-120 V
Collector Emitter Breakdown Voltage
100 V
Collector Emitter Saturation Voltage
-200 mV
Collector Emitter Voltage (VCEO)
100 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
-6 V
Gain Bandwidth Product
120 MHz
hFE Min
140
Max Breakdown Voltage
100 V
Max Collector Current
1 A
Max Frequency
1 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-55 °C
Packaging
Tape and Reel
Polarity
PNP
Transition Frequency
120 MHz

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