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onsemi CPH6445-TL-W

Power Field-Effect Transistor, 3.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
117 mΩ

Dimensions

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Height
1.05 mm

Physical

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Case/Package
SOT-23-6
Contact Plating
Tin
Mount
-55 °C
Number of Pins
6

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
3.5 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
92 mΩ
Drain to Source Voltage (Vdss)
92 mΩ
Fall Time
13 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
310 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape (CT)
Power Dissipation
1.6 W
Rds On Max
117 mΩ
Rise Time
5.5 ns
Turn-Off Delay Time
27 ns
Turn-On Delay Time
Compliant

Compliance Documents

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