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onsemi DTC124EET1G

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75, SOT-416

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Y

Dimensions

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Height
800 µm
Length
1.65 mm
Width
900 µm

Physical

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Case/Package
SOT-416
Contact Plating
Tin
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
250 mV
Collector Emitter Voltage (VCEO)
50 V
Continuous Collector Current
100 mA
Current Rating
100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
hFE Min
800 µm
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Output Current
100 mA
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Operating Supply Voltage
50 V
Packaging
Digi-Reel®
Polarity
Digi-Reel®
Power Dissipation
200 mW
Voltage Rating (DC)
50 V

Compliance Documents

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