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onsemi EFC2K103NUZTDG

Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
170 µm

Supply Chain

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Lifecycle Status
170 µm

Technical

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Continuous Drain Current (ID)
40 A
Drain to Source Breakdown Voltage
12 V
Drain to Source Resistance
1.25 mΩ
Drain to Source Voltage (Vdss)
1.25 mΩ
Gate to Source Voltage (Vgs)
8 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Number of Channels
150 °C
Power Dissipation
3.3 W
Turn-Off Delay Time
165 µs
Turn-On Delay Time
Y

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