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onsemi EFC6604R-TR

Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
RoHS
Compliant

Dimensions

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Height
220 µm

Physical

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Mount
Surface Mount
Number of Pins
6

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
13 A
Drain to Source Resistance
9 mΩ
Drain to Source Voltage (Vdss)
12 V
Element Configuration
Dual
Gate to Source Voltage (Vgs)
12 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.6 W
Number of Channels
2
Power Dissipation
1.6 W
Turn-Off Delay Time
5.2 µs
Turn-On Delay Time
300 ns

Compliance Documents

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