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onsemi EGP10B

Rectifier Diode, 1 Phase, 1 Element, 1A, 100V V(RRM), Silicon, DO-41

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
2.72 mm

Physical

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Case/Package
Axial
Mount
Through Hole
Number of Pins
2
Weight
245 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Average Rectified Current
1 A
Capacitance
22 pF
Current Rating
1 A
Element Configuration
Single
Forward Current
1 A
Forward Voltage
950 mV
Max Forward Surge Current (Ifsm)
30 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Repetitive Reverse Voltage (Vrrm)
100 V
Max Reverse Voltage (DC)
100 V
Max Surge Current
30 A
Min Operating Temperature
-65 °C
Natural Thermal Resistance
50 °C/W
Output Current
1 A
Peak Non-Repetitive Surge Current
30 A
Peak Reverse Current
5 µA
Polarity
Standard
Power Dissipation
2.5 W
Recovery Time
50 ns
Reverse Recovery Time
50 ns
Reverse Voltage
100 V
Voltage Rating (DC)
100 V

Compliance Documents

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