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onsemi ESDL2012MX4T5G

ESD Protection Diode Micro-Packaged Diodes for ESD Protection

Product Details

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Dimensions

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Height
225 µm

Supply Chain

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Lifecycle Status
Production

Technical

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Breakdown Voltage
1.4 V
Capacitance
180 fF
Clamping Voltage
4.7 V
Direction
Bidirectional
Interface
USB
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
313 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Peak Pulse Current
4.7 A
Reverse Standoff Voltage
1 V

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